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- concept in material science (en)
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- n (en)
- k (en)
- Complex Trench Structure Measured Rs and Rp (en)
- Complex Trench Structure Schematic (en)
- Optical properties (en)
- Reflectance (en)
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- Ex. 3: Reflectance and transmittance spectra in 190–1000nm range of ITO deposited on the glass substrate described above, plus the n and k spectra of the ITO film. ITO thickness of 133nm and its n and k spectra were simultaneously determined by fitting measured reflectance and transmittance spectra to theoretical expressions of these quantities using the Forouhi–Bloomer equations. (en)
- Ex. 2: Reflectance spectra collected over the 190–1000 nm wavelength range for a photoresist film on silicon substrate, plus the n and k spectra of the photoresist. The film thickness was found to be 498 nm. The thickness and the n and k spectra of the photoresist were all simultaneously determined. (en)
- Ex. 3: Reflectance and transmittance spectra in 190–1000nm range for an uncoated glass substrate. Note that T = 0 for the glass substrate in the DUV, indicating absorption in this range of the spectrum. It is found that the value of k in the deep UV wavelength range is of the order of k = , and this small non-zero value is consistent with T = 0 in the deep UV. (en)
- Ex. 1: Reflectance spectra collected over 190–1000nm wavelength range for an amorphous silicon film on an oxidized silicon substrate plus the n and k spectra of the a-Si film. The film thickness was found to be 1147nm. The thicknesses of a-Si and SiO2 films, plus the n and k spectra of the a-Si were all simultaneously determined. The n and k spectra of the SiO2 film was held fixed. (en)
- Ex. 5: Measured Rs and Rp reflectance collected on the Complex Trench Structure. (en)
- Ex. 1: Amorphous materials typically exhibit one broad maximum in their n and k spectra. As a material transitions from the amorphous state to the fully crystalline state, the broad maximum sharpens up and other sharp peaks start to appear in the n and k spectra. This is demonstrated for the case of amorphous silicon progressing to poly-silicon and further progressing to crystalline silicon. (en)
- Ex. 5: A trench structure consisting of various films and complex profile. The Poly-Si film was measured on a blanket area of the sample and its n and k spectra were determined based on the Forouhi–Bloomer dispersion equations. A fixed table of values for the n and k spectra of the SiO2 and Si3N4 films was used. With the n and k spectra of these films at hand, and using Rigorous Coupled Wave Analysis , film thicknesses, various depths inside the trench, and CDs are then determined. (en)
- Ex. 4: Multi-spectral analysis was used to analyze the reflectance spectra of a Ge40Se60 film deposited on two different substrates: both silicon and oxidized-silicon substrates. The measurements yielded a single n and k spectra of Ge40Se60. A thickness of 33.6 nm for Ge40Se60 on the oxidized silicon substrate was found, while a thickness of 34.5 nm of Ge40Se60 on the silicon substrate was found. In addition the thickness of the oxide layer was determined to be 166 nm. (en)
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- Comparison_of_k.png (en)
- Comparison_of_n.png (en)
- Complex Trench Structure Measured Rs and Rp.png (en)
- Complex_Trench_Structure_Image.png (en)
- Ex. 2 - Amorphous Silicon on Oxided RR.png (en)
- Ex. 2 - Amorphous Silicon on Oxided nk.png (en)
- Ex. 5 - 193nm Photoresist RR.png (en)
- Ex. 6 - Glass RRTT.png (en)
- Ex. 6 - Glass nk.png (en)
- Ex. 6 - ITO nk.png (en)
- Ex. 6 - ITO on Glass RRTT.png (en)
- Ex. 8 - Multi-Spectral Analysis of Ge40Se60 RR.png (en)
- Ex. 8 - Multi-Spectral Analysis of Ge40Se60 nk.png (en)
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- Refractive index and extinction coefficient of thin film materials (en)
- Модель Форухи — Блумер (ru)
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